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KSB601Y Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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KSB601Y Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 6 page  ©2000 Fairchild Semiconductor International Rev. A, February 2000 PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted * PW ≤10ms, Duty Cycle≤50% Symbol Parameter Value Units VCBO Collector-Base Voltage - 100 V VCEO Collector-Emitter Voltage - 100 V VEBO Emitter-Base Voltage - 7 V IC Collector Current (DC) - 5 A ICP *Collector Current (Pulse) - 8 A IB Base Current - 0.5 A PC Collector Dissipation (Ta=25°C) 1.5 W PC Collector Dissipation (TC=25°C) 30 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C KSB601 Low Frequency Power Amplifier • Medium Speed Switching Industrial Use • Complement to KSD560 1.Base 2.Collector 3.Emitter 1 TO-220 |
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