©2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

PNP Epitaxial Silicon Transistor

* PW

≤10ms, Duty cycle≤50%

* Pulse Test: PW

≤350µs, Duty cycle≤2%

Symbol

Parameter

Ratings

Units

Collector-Base Voltage

-30

V

Collector-Emitter Voltage

-25

V

Emitter-Base Voltage

-5

V

Collector Current (DC)

-300

mA

* Collector Current (Pulse)

-500

mA

Collector Power Dissipation

400

mW

Junction Temperature

150

°C

Storage Temperature

-55 ~ 150

°C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Collector-Base Breakdown Voltage

-30

V

Collector-Emitter Breakdown Voltage

-25

V

Emitter-Base Breakdown Voltage

- 5

V

Collector Cut-off Current

-100

nA

Emitter Cut-off Current

-100

nA

* DC Current Gain

70

400

* Collector-Emitter Saturation Voltage

-0.35

-0.6

V

Classification

O

Y

G

70 ~ 140

120 ~ 240

200 ~ 400

KSA642

Low Frequency Power Amplifier

• Complement to KSD227

• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)

1. Emitter 2. Base 3. Collector

TO-92

1