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RT8H052C Datasheet(PDF) 1 Page - Isahaya Electronics Corporation |
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RT8H052C Datasheet(HTML) 1 Page - Isahaya Electronics Corporation |
1 / 5 page <M F T> Preliminary RT8H052C *This is tentative specification. DESCRIPTION RT8H052C is composed by NPN transistors, PNP transistors and resistors. It can miniaturization of a set and reduce parts or time necessary for completion. This MFT composed the circuit for the over current protection of three shunt method. FEATURES ● Miniaturization of a set. ● Variable VREF by external resistance. ● Open collector output. APPLICATION The over current protection of three shunt method. BLOCK DIAGRAM 110427 (1/4) The over current protection of three shunt method 1 2 3 6 5 4 OUTLINE DRAWING Unit:mm 2.8 1.50 ① ② ③ ⑤ ④ ⑥ 0.65 0.65 VCC IN1 IN2 IN3 VREF GND PIN CONFIGURATION ①IN1 ②IN2 ③IN3 ④VREF ⑤GND ⑥VCC |
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