IS62WV102416ALL-35MLI datasheet(8/17 Pages) ISSI

Part #	IS62WV102416ALL-35MLI

Description	1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM

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Manufacturer	ISSI [Integrated Silicon Solution, Inc]

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8

Integrated Silicon Solution, Inc. — www.issi.com

Rev. A

01/18/08

IS62WV102416ALL

IS62WV102416BLL

IS65WV102416BLL

POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)

-25

-35

Symbol

Parameter

Test Conditions

Min.

Max.

Min.

Max.

Unit

ICC

VDD Dynamic Operating

VDD = Max.,

Com.

—

30

—

25

mA

Supply Current

IOUT = 0 mA, f = fMAX

Ind.

—

35

—

30

VIN = 0.4V or VDD –0.3V

Auto.

—

60

—

60

typ.(2)

25

ICC1

Operating

VDD = Max.,

Com.

—

20

—

20

mA

Supply Current

IOUT = 0 mA, f = 0

Ind.

—

30

—

30

VIN = 0.4V or VDD –0.3V

Auto.

—

50

—

50

ISB1

TTL Standby Current

VDD = Max.,

Com.

—

15

—

15

mA

(TTL Inputs)

VIN = VIH or VIL

Ind.

—

20

—

20

CS1

≥ VIH, f = 0

Auto.

—

40

—

40

ISB2

CMOS Standby

VDD = Max.,

Com.

—

0.8

—

0.8

mA

Current (CMOS Inputs)

CS1

≥ VDD – 0.2V,

Ind.

—

1.2

—

1.2

VIN

≥ VDD – 0.2V, or

Auto.

—

2

—

2

VIN

≤ 0.2V, f = 0

typ.(2)

0.1

Note:

1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

2. Typical values are measured at VDD = 3.0V, TA = 25oC and not 100% tested.

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