KSA614 datasheet(1/4 Pages) FAIRCHILD

Part #	KSA614

Description	Low Frequency Power Amplifier

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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Rev. A, February 2000

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings T

C=25°C unless otherwise noted

Electrical Characteristics T

C=25°C unless otherwise noted

hFE Classification

Symbol

Parameter

Ratings

Units

VCBO

Collector- Base Voltage

- 80

V

VCEO

Collector- Emitter Voltage

- 55

V

VEBO

Emitter- Base Voltage

- 5

V

IC

Collector Current

- 3

A

PC

Collector Dissipation (TC=25°C)

25

W

TJ

Junction Temperature

150

°C

TSTG

Storage Temperature

- 55 ~ 150

°C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

BVCBO

Collector-Base Breakdown Voltage

IC = - 500µA, IE = 0

- 80

V

BVCEO

Collector-Emitter Breakdown Voltage

IC = - 10mA, IB = 0

- 55

V

BVEBO

Emitter-Base Breakdown Voltage

IE = - 500µA, IC = 0

- 5

V

ICBO

Collector Cut-off Current

VCB = - 50V, IE = 0

- 50

µA

hFE

DC Current Gain

VCE = - 5V, IC = - 0.5A

40

240

VCE(sat)

Collector-Emitter Saturation Voltage

IC = - 1A, IB = - 0.1A

- 0.15

- 0.5

V

Classification

R

O

Y

hFE

40 ~ 80

70 ~ 140

120 ~ 240

KSA614

Low Frequency Power Amplifier

Power Regulator

• Collector-Base Voltage : VCBO= -80V

• Collector Dissipation : PC=25W (TC=25°C)

1.Base

2.Collector

3.Emitter

1

TO-220

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