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RJK2062JPK-00-T0 Datasheet(PDF) 2 Page - Renesas Technology Corp |
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RJK2062JPK-00-T0 Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 7 page RJK2062JPK Preliminary R07DS0488EJ0100 Rev.1.00 Page 2 of 6 Sep 19, 2012 Electrical Characteristics (Ta = 25 C) Item Symbol Min Typ Max Unit Test Conditions Gate to source leak current IGSS — — 10 A VGS = 20 V, VDS = 0 Zero gate voltage drain current IDSS — — 10 A VDS = 200 V, VGS = 0 Gate to source cutoff voltage VGS(off) 2.5 — 3.5 V ID = 1 mA , VDS = 10 V Static drain to source on state resistance RDS(on) — 17 22 m ID = 40 A, VGS = 10 V Note5 Input capacitance Ciss — 6800 — pF Output capacitance Coss — 1200 — pF Reverse transfer capacitance Crss — 190 — pF VDS = 10V, VGS = 0, f = 1 MHz Total gate charge Qg — 95 — nC Gate to source charge Qgs — 28 — nC Gate to drain charge Qgd — 15 — nC VDD = 25 V, VGS = 10 V, ID = 40 A Turn-on delay time td(on) — 35 — ns Rise time tr — 11 — ns Turn-off delay time td(off) — 90 — ns Fall time tf — 8.5 — ns ID = 40 A, RL = 0.75 , VGS = 10 V, RG = 4.7 Body-drain diode forward voltage VDF — 0.9 1.17 V IF = 80 A, VGS = 0 Note5 Body-drain diode reverse recovery time trr — 180 — ns IF = 80 A, VGS = 0 diF/dt = 100 A/s Note: 5. Pulse test |
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