TIC246C datasheet(2/3 Pages) COMSET

Part #	TIC246C

Description	SILICON BIDIRECTIONAL TRIODE THYRISTOR

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Manufacturer	COMSET [Comset Semiconductor]

Direct Link	http://comset.halfin.com

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2 / 3 page

TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N,

TIC246S

30/10/2012

COMSET SEMICONDUCTORS

2 | 3

SEMICONDUCTORS

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ Max Unit

IDRM

Repetitive peak

off-state current

VD = Rated VDRM, , IG = 0

TC = 110°C

-

±2

mA

IGT

Gate trigger

current

Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs

-

12

50

mA

Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs

-

-19

-50

Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs

-

-16

-50

Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs

-

34

-

VGT

Gate trigger

voltage

Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs

-

0.8

2

V

Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs

-

-0.8

-2

Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs

-

-0.8

-2

Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs

-

0.9

2

IH

Holding current

Vsupply = +12 V†, IG = 0

initiating ITM = 100 mA

-

22

40

mA

Vsupply = -12 V†, IG = 0

initiating ITM = -100 mA

-

-22

-40

IL

Latching

current

Vsupply = +12 V† (seeNote5)

-

80

mA

Vsupply = -12 V† (seeNote5)

-

-80

VTM

Peak on-state

voltage

ITM = ± 22.5 A, IG = 50 mA (see Note4)

-

±1.4

±1.7

V

dv/dt

Critical rate of

rise of off-state

voltage

VDRM = Rated VDRM, IG = 0

TC = 110°C

-

±400

-

V/µs

di/dt

Critical rate of

rise of off-state

current

VDRM = Rated VDRM, IGT = 50 mA

diG/dt = 50mA/µs, TC = 110°C

-

±100

-

A/µs

dv/dt©

Critical rise of

communication

voltage

VDRM = Rated VDRM, IT = 1.4 IT(RMS)

di/dt = 0.5 IT(RMS) /ms, TC = 80°C

±1.2

±9

-

V/µs

† All voltages are whit respect to Main Terminal 1.

Notes:

1.

These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.

2.

This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to

110°C case temperature at the rate of 400 mA/°C.

3.

This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated

value of peak reverse voltage and on-state current. Surge may be repeated after the device has

returned to original thermal equilibrium.

4.

This parameters must be measured using pulse techniques, tW = ≤1ms, duty cycle ≤ 2 %, voltage-

sensing

contacts, separate from the courrent-carrying contacts are located within 3.2mm (1/8 inch)

from de device body.

5.

The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the

following characteristics : RG = 100Ω, tp(g) = 20 µs, tr = ≤ 15ns, f = 1 kHz.

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