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RJK1003DPP-E0 Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # RJK1003DPP-E0
Description  N-Channel MOS FET 100 V, 50 A, 11 m
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK1003DPP-E0 Datasheet(HTML) 3 Page - Renesas Technology Corp

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RJK1003DPP-E0
Preliminary
R07DS0627EJ0200 Rev.2.00
Page 3 of 6
Oct 17, 2012
Main Characteristics
50
40
30
20
10
0
24
6
8
Case Temperature Tc (
°C)
Power vs. Temperature Derating
Gate to Source Voltage VGS (V)
Typical Transfer Characteristics
200
100
0
4
8
12
16
20
1
10
100
1000
1
10
100
0.1
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain Current ID (A)
Drain to Source on State Resistance
vs. Drain Current
500
400
300
ID = 10 A
Pulse Test
VGS = 10 V
Pulse Test
100
10
1
0.1
1
10
1000
0.01
0.1
1000
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
100
Tc = 75
°C
25
°C
−25°C
VDS = 10 V
Pulse Test
25 A
15 A
Operation in this
area is limited by
R
DS(on)
10
μs
100
μs
30
25
20
15
10
5
0
50
100
150
200
Tc = 25
°C
1 shot pulse
DC Operation
50
40
30
20
10
0
0.1
0.2
0.3
0.4
0.5
Drain to Source Voltage VDS (V)
Typical Output Characteristics
VGS = 4 V
Pulse Test
4.6 V
5 V
6 V
10 V


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