RJK1001DPP-E0-T2 datasheet(1/7 Pages) RENESAS

Part #	RJK1001DPP-E0-T2

Description	N-Channel MOS FET 100 V, 80 A, 5.5 m

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Manufacturer	RENESAS [Renesas Technology Corp]

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R07DS0625EJ0200 Rev.2.00

Page 1 of 6

Oct 17, 2012

Preliminary Datasheet

RJK1001DPP-E0

N-Channel MOS FET

100 V, 80 A, 5.5 m



Features

 High speed switching

 Low drive current

 Low on-resistance R

DS(on) = 4.4 m typ. (at VGS = 10 V)

 Package TO-220FP

Outline

RENESAS Package code: PRSS0003AG-A

(Package name: TO-220FP)

1

2

3

D

S

G

1. Gate

2. Drain

3. Source

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDSS

100

V

Gate to source voltage

VGSS

±20

V

Drain current

ID

80

A

Drain peak current

ID (pulse)

Note1

240

A

Body-drain diode reverse drain current

IDR

80

A

Avalanche current

IAP

Note2

40

A

Avalanche energy

EAS

Note2

160

mJ

Channel dissipation

Pch

Note3

30

W

Channel to case thermal impedance

ch-c

4.17

C/W

Channel temperature

Tch

150

C

Storage temperature

Tstg

–55 to +150

C

Notes: 1. PW

 10 s, duty cycle  1%

2. Value at L = 100

H, Tch = 25C, Rg  50,

3. Tc = 25

C

R07DS0625EJ0200

Rev.2.00

Oct 17, 2012

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