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RJK0601DPN-E0-T2 Datasheet(PDF) 4 Page - Renesas Technology Corp |
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RJK0601DPN-E0-T2 Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page RJK0601DPN-E0 Preliminary R07DS0652EJ0200 Rev.2.00 Page 4 of 6 Aug 24, 2012 10 8 6 4 2 −25 0 25 50 75 100 125 150 0 Case Temperature Tc ( °C) Drain to Source on State Resistance vs. Temperature 0.1 10 1 100 100000 10000 1000 100 VGS = 0 f = 1 MHz Ciss Coss Crss Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage Pulse Test VDS = 10 V ID = 50 A 0 0.5 1.0 1.5 2.0 100 40 VGS = 0 V 10 V Source to Drain Voltage VSD (V) Reverse Drain Current vs. Source to Drain Voltage Pulse Test 100 50 150 250 200 25 50 100 150 75 125 0 Channel Temperature Tch ( °C) Maximum Avalanche Energy vs. Channel Temperature Derating IAP = 55 A VDD = 20 V duty < 0.1% Rg ≥ 50 Ω 20 60 80 0 20 16 12 8 4 40 80 120 160 200 Gate Charge Qg (nC) Dynamic Input Characteristics VDD = 10 V 25 V 50 V ID = 55 A |
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