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RJK60S5DPN Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # RJK60S5DPN
Description  600V - 20A - MOS FET High Speed Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK60S5DPN Datasheet(HTML) 3 Page - Renesas Technology Corp

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RJK60S5DPN
Preliminary
R07DS0952EJ0200 Rev.2.00
Page 3 of 7
Jan 23, 2013
Main Characteristics
40
30
20
10
2
468
10
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
1100
10
0.1
1
0.01
Drain Current
ID (A)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Ta = 25
°C
Pulse Test
VGS = 10 V
Pulse Test
VGS = 5.5 V
6 V
7 V
6.5 V
0
0
2
468
10
0
Drain to Source Voltage
VDS (V)
Maximum Safe Operation Area
8 V
10 V
15 V
30
20
10
25
15
5
2
468
10
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
Ta = 125
°C
Pulse Test
VGS = 5 V
6 V
5.5 V
6.5 V
0
0
8 V
10 V
15 V
Gate to Source Voltage VGS (V)
Typical Transfer Characteristics
10
1
0.1
100
0.01
VDS = 10 V
Pulse Test
Ta = 75
°C
25
°C
Ta = 125
°C
25
°C
−25°C
02550100
75
125 150 175
Case Temperature Tc (°C)
Channel Dissipation vs.
Case Temperature
250
200
150
100
50
0
7 V
0.1
1
10
100
110
100
1000
Tc = 25
°C
1 shot
Operation in this area
is limited by RDS(on)


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