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BDX65 Datasheet(PDF) 1 Page - Comset Semiconductor |
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BDX65 Datasheet(HTML) 1 Page - Comset Semiconductor |
1 / 4 page BDX65 – A – B – C 24/10/2012 COMSET SEMICONDUCTORS 1 | 4 NPN SILICON DARLINGTON POWER TRANSISTOR The BDX65, BDX65A, BDX65 and BDX65C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switching applications. The complementary PNP are BDX64, BDX64A, BDX64B, BDX64C. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage BDX65 60 V BDX65A 80 BDX65B 100 BDX65C 120 VCBO Collector-BaseVoltage BDX65 80 V BDX65A 100 BDX65B 120 BDX65C 140 VEBO Emitter-Base Voltage 5.0 V IC Collector Current IC(RMS) 12 A ICM 16 IB Base Current 0.2 A PT Power Dissipation @ TC = 25° 117 W TJ Junction Temperature -55 to +200 °C TS Storage Temperature THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-C Thermal Resistance, Junction to Case 1.5 °C/W |
Similar Part No. - BDX65_12 |
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Similar Description - BDX65_12 |
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