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RJK60S2DPD Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # RJK60S2DPD
Description  600V - 10A - SJ MOS FET High Speed Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK60S2DPD Datasheet(HTML) 4 Page - Renesas Technology Corp

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RJK60S2DPD
Preliminary
R07DS0741EJ0003 Rev.0.03
Page 4 of 6
Nov 30, 2012
Source to Drain Voltage
VSD (V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
Reverse Drain Current IDR (A)
Body-Drain Diode Reverse
Recovery Time (Typical)
110
100
1000
100
10
di/dt = 100 A/
μs
VGS = 0, Ta = 25°C
1000
100
10
1
10000
050
150
100
300
250
200
Drain to Source Voltage
VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
0.1
Ta = 25
°C
Ciss
Coss
Crss
VGS = 0
f = 100 kHz
800
16
600
12
400
8
200
0
4
0
Gate Charge
Qg (nC)
Dynamic Input Characteristics (Typical)
0
4
8
12
20
16
VGS
VDS
ID = 1 A
Ta = 25
°C
VDD = 480 V
300 V
100 V
VDD = 480 V
300 V
100 V
00.4
0.8
1.6
1.2
100
1
10
0.1
VGS = 0
Pulse Test
25
°C
Ta = 125
°C
Case Temperature
Tc (
°C)
Drain to Source Breakdown Voltage
vs. Case Temperature (Typical)
400
600
500
700
800
−25
0
50
25
75
100 125 150
ID = 10 mA
VGS = 0
0
2
1
3
4
5
6
−25
0
50
25
75
100 125 150
Case Temperature
Tc (
°C)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
ID = 1 mA
0.1 mA
VDS = 10 V


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