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MMBZ12VDLDG Datasheet(PDF) 8 Page - NXP Semiconductors |
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MMBZ12VDLDG Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 15 page MMBZXVCL_MMBZXVDL_SER_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 3 September 2008 8 of 15 NXP Semiconductors MMBZxVCL; MMBZxVDL series Double ESD protection diodes for transient overvoltage suppression [1] In accordance with IEC 61643-321 (10/1000 µs current waveform). [2] Measured from pin 1 or 2 to pin 3. SZ temperature coefficient IZ =1mA MMBZ12VDL MMBZ12VDL/DG - 8.1 - mV/K MMBZ15VDL MMBZ15VDL/DG - 11 - mV/K MMBZ18VCL MMBZ18VCL/DG - 14 - mV/K MMBZ20VCL MMBZ20VCL/DG - 15.8 - mV/K MMBZ27VCL MMBZ27VCL/DG - 23 - mV/K MMBZ33VCL MMBZ33VCL/DG - 29.4 - mV/K Table 10. Characteristics …continued Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit MMBZ27VCL: unidirectional and bidirectional Tamb =25 °C Fig 3. Rated peak pulse power as a function of exponential pulse duration (rectangular waveform); typical values Fig 4. Relative variation of rated peak pulse power as a function of junction temperature; typical values 006aab327 102 10 103 PPPM (W) 1 tp (ms) 10−2 103 102 10−1 10 1 Tj (°C) 0 200 150 50 100 006aab321 0.4 0.8 1.2 PPPM 0 PPPM(25°C) |
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