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RJK03P6DPA-00-J5A Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # RJK03P6DPA-00-J5A
Description  Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
Download  11 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK03P6DPA-00-J5A Datasheet(HTML) 4 Page - Renesas Technology Corp

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RJK03P6DPA
Preliminary
R07DS0905EJ0110 Rev.1.10
Page 4 of 10
Nov 01, 2012
Main Characteristics
• MOS1
100
0
2
468
10
20
16
12
8
4
0
12
3
4
5
10
3
1
30
300
1
10
100
1000
3
400
300
200
0
4
8
12
16
20
10 A
100
30
10 V
5 A
20
15
10
5
0
50
100
150
200
0.1
1
10
100
10
100
1000
1
0.1
1 ms
2.6 V
2.8 V
3.0V
10 V
4.5 V
20
16
12
8
4
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
10
s
Tc = 25 °C
1 shot Pulse
this area is
DS(on)
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
VDS = 5 V
Pulse Test
Pulse Test
VGS = 2.4 V
Tc = 75°C
25°C
–25°C
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain Current ID (A)
Static Drain to Source On State Resistance
vs. Drain Current
Pulse Test
Pulse Test
ID = 20 A
VGS = 4.5 V


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