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RJK03P6DPA-00-J5A Datasheet(PDF) 4 Page - Renesas Technology Corp |
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RJK03P6DPA-00-J5A Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 11 page RJK03P6DPA Preliminary R07DS0905EJ0110 Rev.1.10 Page 4 of 10 Nov 01, 2012 Main Characteristics • MOS1 100 0 2 468 10 20 16 12 8 4 0 12 3 4 5 10 3 1 30 300 1 10 100 1000 3 400 300 200 0 4 8 12 16 20 10 A 100 30 10 V 5 A 20 15 10 5 0 50 100 150 200 0.1 1 10 100 10 100 1000 1 0.1 1 ms 2.6 V 2.8 V 3.0V 10 V 4.5 V 20 16 12 8 4 Case Temperature Tc (°C) Power vs. Temperature Derating Drain to Source Voltage VDS (V) Maximum Safe Operation Area 10 s Tc = 25 °C 1 shot Pulse this area is DS(on) Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics VDS = 5 V Pulse Test Pulse Test VGS = 2.4 V Tc = 75°C 25°C –25°C Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain Current ID (A) Static Drain to Source On State Resistance vs. Drain Current Pulse Test Pulse Test ID = 20 A VGS = 4.5 V |
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