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RJK03K8DNS-00-J5 Datasheet(PDF) 1 Page - Renesas Technology Corp |
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RJK03K8DNS-00-J5 Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page R07DS0789EJ0100 Rev.1.00 Page 1 of 6 Feb 29, 2012 Preliminary Datasheet RJK03N8DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.6 m typ. (at VGS = 8.0 V) Pb-free Halogen-free Outline G D SS S DD D 4 12 3 56 7 8 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain RENESAS Package code: PWSN0008JB-A (Package name: HWSON-8) 8 7 6 5 2 1 3 4 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±12 V Drain current ID 30 A Drain peak current ID(pulse) Note1 120 A Body-drain diode reverse drain current IDR 30 A Avalanche current IAP Note 2 13 A Avalanche energy EAS Note 2 16.9 mJ Channel dissipation Pch Note3 20 W Channel to case thermal impedance ch-c Note3 6.25 C/W Channel temperature Tch 150 C Storage temperature Tstg –55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25 C, Rg 50 3. Tc = 25 C R07DS0789EJ0100 Rev.1.00 Feb 29, 2012 |
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