RJK03K8DNS-00-J5 datasheet(1/7 Pages) RENESAS

Part #	RJK03K8DNS-00-J5

Description	Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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R07DS0789EJ0100 Rev.1.00

Page 1 of 6

Feb 29, 2012

Preliminary Datasheet

RJK03N8DNS

Silicon N Channel Power MOS FET with Schottky Barrier Diode

Power Switching

Features

 High speed switching

 Capable of 4.5 V gate drive

 Low drive current

 High density mounting

 Low on-resistance

RDS(on) = 4.6 m typ. (at VGS = 8.0 V)

 Pb-free

 Halogen-free

Outline

G

D

SS S

DD D

4

12 3

56 7 8

1, 2, 3

Source

4

Gate

5, 6, 7, 8 Drain

RENESAS Package code: PWSN0008JB-A

(Package name: HWSON-8)

8

7

6

5

2 1

3

4

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDSS

30

V

Gate to source voltage

VGSS

±12

V

Drain current

ID

30

A

Drain peak current

ID(pulse)

Note1

120

A

Body-drain diode reverse drain current

IDR

30

A

Avalanche current

IAP

Note 2

13

A

Avalanche energy

EAS

Note 2

16.9

mJ

Channel dissipation

Pch

Note3

20

W

Channel to case thermal impedance

ch-c Note3

6.25

C/W

Channel temperature

Tch

150

C

Storage temperature

Tstg

–55 to +150

C

Notes: 1. PW

 10 s, duty cycle  1%

2. Value at Tch = 25

C, Rg  50 

3. Tc = 25

C

R07DS0789EJ0100

Rev.1.00

Feb 29, 2012

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