RJK03H1DPA-00-J5A datasheet(5/7 Pages) RENESAS

Part #	RJK03H1DPA-00-J5A

Description	30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET

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Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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5 / 7 page

RJK03H1DPA

Preliminary

R07DS0216EJ0300 Rev.3.00

Page 5 of 6

Mar 22, 2013

D. U. T

Rg

IAP

Monitor

VDS

Monitor

VDD

Vin

15 V

0

ID

VDS

IAP

V(BR)DSS

L

VDD

EAR =

L

• I

AP

2

•

2

1

VDSS

VDSS – VDD

Avalanche Test Circuit

Avalanche Waveform

Pulse Width PW (s)

Normalized Transient Thermal Impedance vs. Pulse Width

Vin Monitor

D.U.T.

Vin

RL

VDS

= 10 V

tr

td(on)

Vin

90%

10%

Vout

td(off)

Vout

Monitor

90%

10%

tf

Switching Time Test Circuit

Switching Time Waveform

Rg

3

1

0.3

0.1

0.03

0.01

1 m

10 m

100 m

1

10

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot

puls

e

PDM

PW

T

D =

PW

T

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RJK03H1DPA-00-J5A Datasheet(PDF) 5 Page - Renesas Technology Corp

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