2N6371 datasheet(3/4 Pages) COMSET

Part #	2N6371

Description	HIGH POWER SILICON NPN TRANSISTORS

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Manufacturer	COMSET [Comset Semiconductor]

Direct Link	http://comset.halfin.com

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3 / 4 page

NPN 2N6253 – 2N6254 – 2N6371

09/11/2012

COMSET SEMICONDUCTORS

3 | 4

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

VCEO(SUS)

Collector-Emitter Sustaining

Voltage (*)

IC=0.2 A, IB=0 A

2N6253

45

-

V

2N6254

80

-

2N6371

40

-

VCER(SUS)

Collector-Emitter Sustaining

Voltage (*)

RBE=100Ω

IC=0.2 mA

2N6253

55

-

V

2N6254

85

-

2N6371

45

-

VCEV(SUS)

Base-Emitter Voltage (*)

IC=0.1 A

VBE=-1.5 V

2N6253

55

-

V

2N6254

90

-

2N6371

50

-

VBE

Base-Emitter Voltage (*)

VCE=4 V, IC=3 A

2N6253

-

1.7

V

VCE=2 V, IC=5 A

2N6254

-

1.5

VCE=4 V, IC=16 A

2N6371

-

4

hFE

Static Forward Current

transfer ratio (*)

VCE=4 V, IC=3 A

2N6253

20

-

70

-

VCE=4 V, IC=15 A

3

-

VCE=2 V, IC=5 A

2N6254

20

-

70

VCE=4 V, IC=15 A

5

-

VCE=4 V, IC=8 A

2N6371

15

-

60

VCE=4 V, IC=16 A

4

-

hfe

Small Signal Current Gain

VCE=4 V, IC=1 A

f=1 kHz

2N6253

2N6254

2N6371

10

-

fT

Transition Frequency

VCE=4 V, IC=1 A

2N6253

-

kHz

2N6254

-

2N6371

800

-

Is/b

Second Breakdown

Collector Current

tp=1s, non rep.

VCE=45 V

2N6253

2.55

-

A

2N6254

1.87

-

VCE=40 V

2N6371

2.9

-

(*) Pulse Width

≈ 300 µs, Duty Cycle ∠ 2.0%

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