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2N6052 Datasheet(PDF) 1 Page - Comset Semiconductor |
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2N6052 Datasheet(HTML) 1 Page - Comset Semiconductor |
1 / 3 page PNP 2N6050 – 2N6051 – 2N6052 17/10/2012 COMSET SEMICONDUCTORS 1 | 3 P PO OW WE ER R C CO OM MP PL LE EM ME EN NT TA AR RY Y S SIIL LIIC CO ON N T TR RA AN NS SIIS ST TO OR RS S The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types are 2N6057, 2N6058 and 2N6059 respectively. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCBO Collector-Base Voltage IE=0 2N6050 -60 V 2N6051 -80 2N6052 -100 VCEO Collector-EmitterVoltage IB=0 2N6050 -60 V 2N6051 -80 2N6052 -100 VCEX Collector-EmitterVoltage VBE= 1.5 V 2N6050 -60 V 2N6051 -80 2N6052 -100 VEBO Emitter-Base Voltage IC=0 -5.0 V IC Collector Current -12 A ICM Collector Peak Current -20 A IB Base Current -200 mA PT Power Dissipation @ TC < 25° 150 W TJ Junction Temperature 200 °C Ts Storage Temperature -65 to +200 THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-C Thermal Resistance, Junction to Case 1.17 °C/W |
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