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2N2219 Datasheet(PDF) 1 Page - Comset Semiconductor

Part No. 2N2219
Description  SWITCHING SILICON TRANSISTORS
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Maker  COMSET [Comset Semiconductor]
Homepage  http://comset.halfin.com
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NPN 2N2218 – 2N2218A
2N2219 – 2N2219A
1 | 4
S
SW
WIIT
TC
CH
HIIN
NG
G S
SIIL
LIIC
CO
ON
N T
TR
RA
AN
NS
SIIS
ST
TO
OR
RS
S
The 2N2218-A and 2N2219-A are NPN transistors mounted in TO-39 metal case .
They are designed for high-speed switching applications and feature useful current gain over a
wide range of collector current, low leakage currents and low saturation voltages.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
2N2218
2N2219
2N2218
A
2N2219
A
VCEO
Collector-Emitter Voltage
30
40
V
VCBO
Collector-Base Voltage
60
75
V
VEBO
Emitter-Base Voltage
5
6
V
IC
Collector Current
800
mA
PD
Total Power Dissipation
Tamb = 25°
0.8
W
Tcase= 25°
3
TJ
Junction Temperature
175
°C
TStg
Storage Temperature range
-65 to +200
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
RthJ-a
Thermal Resistance, Junction to ambient in free air
50
°C/W
RthJ-c
Thermal Resistance, Junction to case
187.5
°C/W




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