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2N1613 Datasheet(PDF) 2 Page - Comset Semiconductor

Part No. 2N1613
Description  SILICON PLANAR EPITAXIAL TRANSISTORS
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Maker  COMSET [Comset Semiconductor]
Homepage  http://comset.halfin.com
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NPN 2N1613 – 2N1711
24/09/2012
COMSET SEMICONDUCTORS
2/3
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
Typ Max
Unit
ICBO
Collector Cutoff Current
VCE=60 V, IE=0
-
-
10
nA
VCE=60 V, IE=0
Tamb = 150°C
-
-
10
µA
IEB0
Emitter Cutoff Current
VEB=5 V
2N1613
-
-
10
nA
VEB=5 V
2N1711
-
-
5
VCBO
Collector Base
Breakdown Voltage
IC=0.1 mA
75
-
-
V
VEBO
Emitter Base Breakdown
Voltage
IE=100 µA , IC=0
7
-
-
V
VCE(SAT)(*)
Collector-Emitter
saturation Voltage
IC=150 mA , IB=15 mA
-
-
1.5
V
VBE(SAT)(*)
Base-Emitter saturation
Voltage
IC=150 mA, IB=15 mA
-
-
1.3
V
hFE(*)
DC Current Gain
IC=0.1 mA, VCE=10 V
2N1613
20
-
-
-
IC=10 mA, VCE=10 V
35
-
-
IC=150 mA, VCE=10 V
40
-
120
IC=500 mA, VCE=10 V
20
-
-
IC=10 µA, VCE=10 V
2N1711
20
-
-
IC=0.1 mA, VCE=10 V
35
-
-
IC=10 mA, VCE=10 V
75
-
-
IC=150 mA, VCE=10 V
100
-
300
IC=500 mA, VCE=10 V
40
-
-
Symbol
Ratings
Test Condition(s)
Min Typ
Mx
Unit
fT
Transition Frequency
IC=50 mA, VCE=10
V, f= 100MHz
2N1613
60
-
-
MHz
2N1711
70
-
-
CCBO
Collector-Base
Capacitance
IE= 0, VCB= 10 V, f = 1MHz
-
-
25
pF
CEBO
Emitter-Base
Capacitance
IC= 0, VEB= 0.5V, f = 1MHz
-
-
80
pF
NF
Noise Figure
IC= 0.3 mA, VCE= 10 V
f = 1 kHz, R9= 510 Ω
2N1613
-
-
12
dB
IC= 0.3 mA, VCE= 10 V
f = 1 kHz, R9= 510 Ω
2N1711
-
-
8
(*) Pulse conditions : tp < 300
µs, δ =2%.




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