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2N7002K-AU_SX_00001 Datasheet(PDF) 1 Page - Pan Jit International Inc. |
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2N7002K-AU_SX_00001 Datasheet(HTML) 1 Page - Pan Jit International Inc. |
1 / 7 page PAGE . 1 October 29,2010-REV.02 2N7002K-AU 60V N-Channel Enhancement Mode MOSFET - ESD Protected Maximum RATINGS and Thermal Characteristics (T A=25 O C unless otherwise noted ) Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 5 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE PA RA ME TE R S ymbol Li mi t Uni ts D rai n-S ource Voltage V DS 60 V Gate-S ource Voltage V GS +20 V C o nti nuo us D ra i n C urre nt I D 300 mA P uls ed D rai n C urrent 1) I DM 2000 mA Maxi mum P ower D i ssi pati on T A =2 5 O C T A =7 5 O C P D 350 210 mW Operati ng Juncti on and S torage Temperature Range T J ,T STG -55 to + 150 O C Junction-to Ambient Thermal Resistance(PCB mounted)2 R θ JA 357 O C/W MECHANICAL • Case: SOT-23 Package • Terminals : Solderable per MIL-STD-750,Method 2026 • Apporx. Weight: 0.0003 ounces, 0.0084 grams • Marking : K72 DATA SOT-23 Unit inch(mm) : 0.120(3.04) 0.110(2.80) 0.056(1.40) 0.047(1.20) 0.079(2.00) 0.070(1.80) 0.020(0.50) 0.013(0.35) 0.044(1.10) 0.035(0.90) 0.008(0.20) 0.003(0.08) 0.004(0.10) 0.000(0.00) FEATURES • R DS(ON), VGS@10V,IDS@500mA=3Ω • R DS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. • ESD Protected 2KV HBM • Acqire quality system certificate : TS16949 • AEC-Q101 qualified • Lead free in comply with EU RoHS 2002/95/EC directives. • Green molding compound as per IEC61249 Std. . (Halogen Free) |
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