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TISP61089M Datasheet(PDF) 2 Page - Bourns Electronic Solutions |
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TISP61089M Datasheet(HTML) 2 Page - Bourns Electronic Solutions |
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2 / 6 page  SEPTEMBER 2013 Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. Rating Symbol Value Unit Repetitive peak off-state voltage, IG =0 VDRM -170 TJ = 25 °C TJ = 25 °C V Repetitive peak gate-cathode voltage, VKA =0 VGKRM -167 V Non-repetitive peak on-state pulse current (see Notes 1 and 2) ITSP A 10/1000 μs (Bellcore GR-1089-CORE, Issue 1, November 1994, Section 4) 5/310 μs (ITU-T K.20/21/45, YD/T-950, open-circuit voltage wave shape 10/700 μs) 2/10 μs (Bellcore GR-1089-CORE) 30 70 120 Non-repetitive peak on-state current, 60 Hz (see Notes 1 and 2 and Figure 2 on Page 4) ITSM A 0.1 s 11 1 s 5 s 300 s 900 s 4.5 2.4 0.95 0.93 Junction temperature TJ -40 to +150 °C Storage temperature range Tstg -40 to +150 °C NOTES: 1. Initially the protector must be in thermal equilibrium with TJ = 25 °C. The surge may be repeated after the device returns to its initial conditions. 2. The rated current values may be applied either to the Ring to Ground or to the Tip to Ground terminal pairs. Additionally, both terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice the rated current value of an individual terminal pair). TISP61089M SLIC Overvoltage Protector Absolute Maximum Ratings, TJ = 25 °C (Unless Otherwise Noted) Recommended Operating Conditions Min Typ Max Unit CG Gate decoupling capacitor 100 nF Electrical Characteristics, TJ = 25 °C (Unless Otherwise Noted) Parameter Test Conditions Min Typ Max Unit ID Off-state current VD =VDRM, VGK =0 TJ =25 °C-5 µA TJ =85 °C-50 µA V(BO) Breakover voltage 2 (see Note 4) /10 µs, ITM = -100 A, di/dt = -80 A/µs, RS =50 Ω, VGG = -100 V, -112 V VF Forward voltage IF =5 A, tw =200 μs3 V VFRM Peak forward recovery voltage 2/10 µs, IF = 100 A, di/dt = 80 A/µs, RS =50 Ω, (see Note 4) 10 V IH Holding current I T = -1 A, di/dt = 1A/ms, VGG = -100 V -150 mA IGAS Gate reverse current VGG =VGK =VGKRM, VKA =0 TJ =25 °C-5 µA TJ =85 °C-50 µA IGT Gate trigger current IT =-3 A, tp(g) ≥ 20 µs, VGG =-48 V 5 mA VGT Gate trigger voltage IT =-3 A, tp(g) ≥ 20 µs, VGG =-48 V 2.5 V CAK Anode-cathode off-state capacitance f= 1MHz, Vd =1V, IG = 0, (see Note 3) VD =-3 V 100 pF VD =-48 V 50 pF NOTE: 3. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured device terminals are a.c. connected to the guard terminal of the bridge. NOTE: 4. Voltage measurements should be made with an oscilloscope with limited bandwidth (20 MHz) to avoid high frequency noise. |
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