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CHR2391-9900 Datasheet(PDF) 2 Page - United Monolithic Semiconductors |
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CHR2391-9900 Datasheet(HTML) 2 Page - United Monolithic Semiconductors |
2 / 6 page CHR2391 12 -16GHz Integrated Down Converter Ref. : : DSCHR23911192 - 11 Jul 11 2/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Electrical Characteristics for Broadband Operation Tamb = +25°C, Vd = 3.5V ,Idl=50mA, Idm=50mA Symbol Parameter Min Typ Max Unit FRF RF frequency range 12 16 GHz FLO LO frequency range 5.25 7.25 GHz FIF IF frequency range DC 1.5 GHz Gc Conversion gain (1) +13 +15 dB NF Noise Figure, for IF>0.1GHz (1) 2 2.5 dB PLO LO Input power +10 +13 dBm Img Sup Image Suppression 15 dBc P1dB Input power at 1dB gain compression -10 dBm IP3 Input IP3 2.5 dBm LO VSWR Input LO VSWR (1) 2.0:1 RF VSWR Input RF VSWR (1) 2.0:1 Id Bias current (2) 100 130 mA (1) On Wafer measurements (2) Current source biasing network is recommended. Optimum performances are obtained for Idm=50mA (Id consumption of the X2+buffer; vgb -0.4V) and Idl=50mA(Id consumption for the lna; Vga -0.4V) Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Parameter Values Unit Vd Maximum drain bias voltage 4.0 V Id Maximum drain bias current 180 mA Vg Gate bias voltage -2.0 to +0.4 V Vdg Maximum drain to gate voltage ( Vd – Vg) +5 V Pin Maximum RF peak input power overdrive (2) -5 dBm Tch Maximum channel temperature 175 °C Ta Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +125 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. |
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