CHA7215

RoHS COMPLIANT

Ref : DSCHA72159287 - 14 Oct 09

1/8

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

X-band High Power Amplifier

GaAs Monolithic Microwave IC

Description

The CHA7215 is a monolithic three-stage

GaAs high power amplifier designed for X

band applications.

The HPA provides typically 9W output power

associated to 35% power added efficiency at

4dBc and a high robustness on mismatch

load.

This device is manufactured using 0.25 µm

Power pHEMT process, including, via holes

through the substrate and air bridges.

Main Features

0.25 µm Power pHEMT Technology

Frequency band: 8.5 – 11.5GHz

Output power: 39.5dBm at saturation

High linear gain: 28dB

Power added efficiency: 34% @4dBc

Quiescent bias point: Vd=8V, Id=2.3A

Chip size

Output Power versus Frequency @Pin=19dBm

35

35,5

36

36,5

37

37,5

38

38,5

39

39,5

40

40,5

41

8

8,5

9

9,5

10

10,5

11

11,5

12

Frequency (GHz)

Temp=-40°C

Temp=+20°C

Temp=+80°C

Main Characteristics

Vd=8V, Id (Quiescent) = 2.3A, Drain Pulse width = 25µs, Duty cycle = 10%

Symbol

Parameter

Min

Typ

Max

Unit

Top

Operating temperature range

-40

+80

°C

Fop

Operating frequency range

8.5

11.5

GHz

PAE_4dBc

Power added efficiency @4dBc @ 20°C

34

%

Psat

Saturated output power @ 20°C

39.5

dBm

G

Small signal gain @ 20°C

25

28

31

dB

ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions!

●

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IN

OUT

VG1R

VG2R

VG3R

VD1

VD1

VD2

VD3

VD2

VD3

●

●

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●

●

●

●

●

●

●

VG3R

●

●

IN

OUT

VG1R

VG2R

VG3R

VD1

VD1

VD2

VD3

VD2

VD3

●

●

●

●

●

●

●

●

●

●

VG3R