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RQA0004PXDQS Datasheet(PDF) 6 Page - Renesas Technology Corp

Part # RQA0004PXDQS
Description  Silicon N-Channel MOS FET
Download  19 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RQA0004PXDQS Datasheet(HTML) 6 Page - Renesas Technology Corp

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RQA0004PXDQS
Preliminary
R07DS0418EJ0500 Rev.5.00
Page 6 of 18
May 09, 2012
Evaluation Circuit 2 (@VDD = 3.7 & 6.0V Tuning, f = 520 MHz)
RF OUT
RF IN
VGG
VDD
C1 C2
C3
C5
C6
C12
C13
L1
L4
L2
L3
R1
C1, C4, C10, C14: 100 pF Chip Capacitor
C2:
10 pF Chip Capacitor
C3, C7:
2 pF Chip Capacitor
C5, C12:
1000 pF Chip Capacitor
C6, C11:
1
μF /+16V Chip Tantalum Capacitor
C8:
2200 pF Chip Capacitor
C9:
3 pF Chip Capacitor
C13:
8 pF Chip Capacitor
L1, L2, L4:
5.6 nH Chip Inductor
L3:
27 nH Chip Inductor
L5:
4Turns D : 0.5 mm,
φ2.4 mm Enamel Wire
R1:
6.8k
Ω Chip Resistor
R2:
180
Ω Chip Resistor
50
Ω
50
Ω
C14
C11
C9
C7
C8
C10
C4
L5
R2
RQA0004
Output Power, Drain Current
vs. Input Power
Input Power Pin (dBm)
0
5
10
25
30
0
0.1
0.2
0.3
-5
0
5
10
20
0.15
0.05
VDS = 3.7V
IDQ = 50 mA
f = 520 MHz
ID
Pout
15
15
0.25
Power Gain, Power Added Efficiency
vs. Input Power
Input Power Pin (dBm)
0
10
20
30
40
0
20
40
60
80
-5
0
5
10
PAE
PG
15
VDS = 3.7V
IDQ = 50 mA
f = 520 MHz


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