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RQJ0201UGDQA Datasheet(PDF) 5 Page - Renesas Technology Corp

Part # RQJ0201UGDQA
Description  Silicon P Channel MOS FET Power Switching
Download  7 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RQJ0201UGDQA Datasheet(HTML) 5 Page - Renesas Technology Corp

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RQJ0201UGDQA
Preliminary
R07DS0290EJ0400 Rev.4.00
Page 5 of 6
Mar 28, 2011
Dynamic Input Characteristics
Gate Charge Qg (nc)
Switching Characteristics
Drain Current ID (A)
Typical Capacitance vs.
Drain to Source Voltage
Drain to Source Voltage VDS (V)
Input Capacitance vs.
Gate to Source Voltage
Gate to Source Voltage VGS (V)
Reverse Drain Current vs.
Source to Drain Voltage
Source to Drain Voltage VSD (V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
Case Temperature Tc (°C)
tf
Pulse Test
Tc = 25°C
–
10V
–
5V
VGS = 0 V
5, 10 V
–0.2
–0.3
–0.4
–0.5
–0.6
0
–4
–2
–6
–8
–10
25
50
75
100
125
150
0
–0.4
–0.8
–1.2
–1.6
–2.0
800
850
900
950
1000
1050
1100
–
10 –8 –6 –4 –20
2
4
8
610
10
100
1000
–0
–5
–10
–15
–20
1
10
100
1000
–
0.1
–
1
–
10
0
2468
10
0
–20
–40
0
–4
–8
–12
–16
ID = –3.4 A
Tc = 25°C
–10 V
VDD = –20 V
–10 V
12
VDD = –20 V
VGS
VDS
–5 V
–5 V
16
VDD = –10 V
VGS = –4.5 V
Rg = 4.7
Ω
PW = 5
μs
Tc = 25°C
td(on)
td(off)
tr
VDS = 0 V
f = 1 MHz
–1 mA
ID = –10 mA
VGS = 0
Crss
Coss
VGS = 0 V
f = 1 MHz
Ciss


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