RQJ0204XGDQA_11 datasheet(5/7 Pages) RENESAS

Part #	RQJ0204XGDQA

Description	Silicon P Channel MOS FET Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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5 / 7 page

RQJ0204XGDQA

Preliminary

R07DS0293EJ0400 Rev.4.00

Page 5 of 6

Mar 28, 2011

tf

–0.1

–0.2

–0.4

–0.3

–0.5

–0.7

–0.6

25

50

75

100

125

150

220

240

260

280

300

320

–

10 –8 –6 –4 –20

2

4

8

610

10

100

1000

–0

–5

–10

–15

–20

1

10

100

1000

–

0.1

–

1

–

10

VDD = –10 V

VGS = –4.5 V

Rg = 4.7

Ω

PW = 5

μs

Tc = 25°C

td(on)

td(off)

tr

VGS = 0

Crss

Coss

VGS = 0 V

f = 1 MHz

Ciss

01

2

3

4

5

0

–

20

–

30

0

–

4

–

8

–

12

ID = –1.6 A

Tc = 25°C

–

10 V

VDD = –20 V

–

10 V

6

VDD = –20 V

VGS

VDS

–

5 V

–

5 V

–

10

VDS = 0 V

f = 1 MHz

–1 mA

ID = –10 mA

Dynamic Input Characteristics

Gate Charge Qg (nc)

Switching Characteristics

Drain Current ID (A)

Typical Capacitance vs.

Drain to Source Voltage

Drain to Source Voltage VDS (V)

Input Capacitance vs.

Gate to Source Voltage

Gate to Source Voltage VGS (V)

Reverse Drain Current vs.

Source to Drain Voltage

Source to Drain Voltage VSD (V)

Body-Drain Diode Forward Voltage vs.

Case Temperature

Case Temperature Tc (°C)

0

–4

–2

–3

–1

0

–0.4

–0.8

–1.2

–1.6

–2.0

Pulse Test

Tc = 25°C

VGS = 0 V

5, 10 V

–

10V

–

5V

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