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RQJ0204XGDQA Datasheet(PDF) 5 Page - Renesas Technology Corp |
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RQJ0204XGDQA Datasheet(HTML) 5 Page - Renesas Technology Corp |
5 / 7 page RQJ0204XGDQA Preliminary R07DS0293EJ0400 Rev.4.00 Page 5 of 6 Mar 28, 2011 tf –0.1 –0.2 –0.4 –0.3 –0.5 –0.7 –0.6 25 50 75 100 125 150 220 240 260 280 300 320 – 10 –8 –6 –4 –20 2 4 8 610 10 100 1000 –0 –5 –10 –15 –20 1 10 100 1000 – 0.1 – 1 – 10 VDD = –10 V VGS = –4.5 V Rg = 4.7 Ω PW = 5 μs Tc = 25°C td(on) td(off) tr VGS = 0 Crss Coss VGS = 0 V f = 1 MHz Ciss 01 2 3 4 5 0 – 20 – 30 0 – 4 – 8 – 12 ID = –1.6 A Tc = 25°C – 10 V VDD = –20 V – 10 V 6 VDD = –20 V VGS VDS – 5 V – 5 V – 10 VDS = 0 V f = 1 MHz –1 mA ID = –10 mA Dynamic Input Characteristics Gate Charge Qg (nc) Switching Characteristics Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage Drain to Source Voltage VDS (V) Input Capacitance vs. Gate to Source Voltage Gate to Source Voltage VGS (V) Reverse Drain Current vs. Source to Drain Voltage Source to Drain Voltage VSD (V) Body-Drain Diode Forward Voltage vs. Case Temperature Case Temperature Tc (°C) 0 –4 –2 –3 –1 0 –0.4 –0.8 –1.2 –1.6 –2.0 Pulse Test Tc = 25°C VGS = 0 V 5, 10 V – 10V – 5V |
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