UPA2373T1P-E4-A datasheet(1/11 Pages) RENESAS

Part #	UPA2373T1P-E4-A

Description	Dual Drain common, N-channel MOSFET 24V, 6A, 23.0m

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Manufacturer	RENESAS [Renesas Technology Corp]

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R07DS0674EJ0101 Rev.1.01

Page 1 of 10

Aug 19, 2013

Preliminary Data Sheet

μPA2373T1P

Dual (Drain common), N-channel MOSFET

24V, 6A, 23.0m

Ω

DESCRIPTION

The

μPA2373T1P is a switching device, which can be driven directly by a 2.5 V power source.

The

μPA2373T1P features a low on-state resistance and excellent switching characteristics, and is suitable for

applications such as power switch of portable machine and so on. Best suite for single cell LiB application.

FEATURES

• 2.5 V drive available

• Low on-state resistance

⎯ R

SS(on)1 = 23.0 mΩ MAX. (VGS = 4.5 V, IS = 3.0 A)

⎯ R

SS(on)2 = 24.0 mΩ MAX. (VGS = 4.0 V, IS = 3.0 A)

⎯ R

SS(on)3 = 25.0 mΩ MAX. (VGS = 3.8 V, IS = 3.0 A)

⎯ R

SS(on)4 = 30.0 mΩ MAX. (VGS = 3.1 V, IS = 3.0 A)

⎯ R

SS(on)4 = 39.0 mΩ MAX. (VGS = 2.5 V, IS = 3.0 A)

• Built-in G-S protection diode against ESD

ORDERING INFORMATION

Part No.

Lead Plating

Packing

Package

μPA2373T1P-E4-A∗1

Ni/Au

Reel 5000 p/reel

4-pin EFLIP-LGA

Note:

∗1. Pb-free (This product does not contain Pb in the external electrode and other parts.)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Item

Symbol

Ratings

Unit

Source to Source Voltage (VGS = 0 V)

VSSS

24.0

V

Gate to Source Voltage (VDS = 0 V)

VGSS

±12.0

V

Source Current (DC)

∗1

IS(DC)

±6.0

A

Source Current (pulse)

∗2

IS(pulse)

±60

A

Total Power Dissipation (2 units)

∗1

PT1

1.3

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

−55 to +150

°C

Note:

∗1. Mounted on ceramic board of 50 cm2 ×1.0 mmt

∗2. PW ≤ 10 μs, Duty Cycle ≤ 1%

R07DS0674EJ0101

Rev.1.01

Aug 19, 2013

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