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UPA2373T1P-E4-A Datasheet(PDF) 1 Page - Renesas Technology Corp |
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UPA2373T1P-E4-A Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 11 page R07DS0674EJ0101 Rev.1.01 Page 1 of 10 Aug 19, 2013 Preliminary Data Sheet μPA2373T1P Dual (Drain common), N-channel MOSFET 24V, 6A, 23.0m Ω DESCRIPTION The μPA2373T1P is a switching device, which can be driven directly by a 2.5 V power source. The μPA2373T1P features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. Best suite for single cell LiB application. FEATURES • 2.5 V drive available • Low on-state resistance ⎯ R SS(on)1 = 23.0 mΩ MAX. (VGS = 4.5 V, IS = 3.0 A) ⎯ R SS(on)2 = 24.0 mΩ MAX. (VGS = 4.0 V, IS = 3.0 A) ⎯ R SS(on)3 = 25.0 mΩ MAX. (VGS = 3.8 V, IS = 3.0 A) ⎯ R SS(on)4 = 30.0 mΩ MAX. (VGS = 3.1 V, IS = 3.0 A) ⎯ R SS(on)4 = 39.0 mΩ MAX. (VGS = 2.5 V, IS = 3.0 A) • Built-in G-S protection diode against ESD ORDERING INFORMATION Part No. Lead Plating Packing Package μPA2373T1P-E4-A∗1 Ni/Au Reel 5000 p/reel 4-pin EFLIP-LGA Note: ∗1. Pb-free (This product does not contain Pb in the external electrode and other parts.) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Item Symbol Ratings Unit Source to Source Voltage (VGS = 0 V) VSSS 24.0 V Gate to Source Voltage (VDS = 0 V) VGSS ±12.0 V Source Current (DC) ∗1 IS(DC) ±6.0 A Source Current (pulse) ∗2 IS(pulse) ±60 A Total Power Dissipation (2 units) ∗1 PT1 1.3 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Note: ∗1. Mounted on ceramic board of 50 cm2 ×1.0 mmt ∗2. PW ≤ 10 μs, Duty Cycle ≤ 1% R07DS0674EJ0101 Rev.1.01 Aug 19, 2013 |
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