UPA2739T1A datasheet(1/7 Pages) RENESAS

Part #	UPA2739T1A

Description	P-channel MOSFET -30 V, -85 A, 2.8 m

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Manufacturer	RENESAS [Renesas Technology Corp]

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R07DS0885EJ0102 Rev.1.02

Page 1 of 6

Nov 28, 2012

Data Sheet

μPA2739T1A

P-channel MOSFET

–30 V, –85 A, 2.8 m

Ω

Description

The

μ PA2739T1A is P-channel MOS Field Effect Transistors designed for high current switching applications.

Features

• V

DSS = −30 V (TA = 25°C)

• Low on-state resistance

⎯ R

DS(on) = 2.8 mΩ MAX. (VGS = −10 V, ID = −46 A)

⎯ R

DS(on) = 5.7 mΩ MAX. (VGS = −4.5 V, ID = −23 A)

• 4.5 V Gate-drive available

• Thin type surface mount package with heat spreader

• Halogen free

Ordering Information

Part No.

LEAD PLATING

PACKING

Package

μ PA2739T1A-E2-AY∗1

Pure Sn

Tape 3000 p/reel

8-pin HVSON(6051)

0.1 g TYP.

Note: ∗1. Pb-free (This product does not contain Pb in external electrode.)

Absolute Maximum Ratings (TA = 25°C)

Item

Symbol

Ratings

Unit

Drain to Source Voltage (VGS = 0 V)

VDSS

−30

V

Gate to Source Voltage (VDS = 0 V)

VGSS

m20

V

Drain Current (DC) (TC = 25°C)

ID(DC)

m85

A

Drain Current (pulse) ∗

1

ID(pulse)

m180

A

Total Power Dissipation ∗

2

PT1

1.5

W

Total Power Dissipation (PW = 10 sec) ∗

2

PT2

4.6

W

Total Power Dissipation (TC = 25°C)

PT3

83

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

−55 to +150

°C

Single Avalanche Current ∗

3

IAS

-40

A

Single Avalanche Energy ∗

3

EAS

160

mJ

Thermal Resistance

Channel to Ambient Thermal Resistance ∗2

Rth(ch-A)

83.3

°C/W

Channel to Ambient Thermal Resistance ∗2

Rth(ch-C)

1.5

°C/W

Notes: ∗1. PW

≤ 10

μs, Duty Cycle ≤ 1%

∗2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt

∗3. Starting Tch = 25°C, VDD = −15 V, RG = 25 Ω, VGS = −20 → 0 V, L = 100 μH

R07DS0885EJ0102

Rev.1.02

Nov 28, 2012

8-pin HVSON(6051)

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