DATA SHEET

SEMICONDUCTOR

http://www.yeashin.com

1

REV.02 20120305

GBU10A THRU GBU10M

10 Amp Single Phase Glass Passivated

Bridge Rectifiers 50 to 1000 Volts

FEATURES

•Plastic Material has Underwriters Laboratory

•Glass Passivated Chip junction

•High Surge Overload Rating

•Reliable Low Cost Construction Utilizing Molded Plastic Technique

•High temperature soldering : 260

•Pb free product at available : 99% Sn above meet RoHS

environment substance directive request

Maximum Ratings

•Operating Temperature: -55℃ to +150℃

•Storage Temperature: -55℃ to +150℃

•Typical Thermal Resistance:2.2℃/W Junction to Case(Heatsink)

MCC

Part Number

Maximum

Recurrent

Peak Reverse

Voltage

Maximum

RMS Voltage

Maximum DC

Blocking

Voltage

GBU10A

50V

35V

50V

GBU10B

100V

70V

100V

GBU10D

200V

140V

200V

GBU10G

400V

280V

400V

GBU10J

600V

420V

600V

GBU10K

800V

560V

800V

GBU10M

1000V

700V

1000V

Electrical Characteristics @ 25℃ Unless Otherwise Specified

Maximum Average

Forward Current

(with heatsink Note1)

IF(AV)

10 A

TA = 100℃

Peak Forward Surge

Current

IFSM

200A

8.3ms, half sine

Maximum

Instantaneous

Forward Voltage

VF

1.1V

At 5.0/7.5/12.5/

17.5A DC

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

IR

5.0uA

500uA

TA = 25℃

TA = 125℃

Typical Junction

Capacitance

CJ

70pF

Measured at

1.0MHz,

VR=4.0V

I2t Rating for Fusing

I2t

200A2S t<8.3ms

Note:1.Device mounted on 100mm × 100mm × 1.6mm Cu Plate Heatsink

0.125 (3.2) x 45

o

CHAMFER

0.085 (2.16)

0.065 (1.65)

0.020 R (TYP.)

0.880 (22.3)

0.860 (21.8)

0.100 (2.54)

0.085 (2.16)

0.160 (4.1)

0.140 (3.5)

0.075

(1.9) R.

0.080

0.060

(2.03)

(1.52)

0.050 (1.27)

0.040 (1.02)

0.080

0.065

(2.03)

(1.65)

0.210

0.190

(5.33)

(4.83)

0.140 (3.56)

0.130 (3.30)

9

o

TYP.

5

o

TYP.

0.085 (2.16)

0.075 (1.90)

0.022 (0.56)

0.018 (0.46)

0.310 (7.9)

0.290 (7.4)

0.740 (18.8)

0.720 (18.3)

0.710 (18.0)

0.690 (17.5)

Dimensions in inches and (millimeters)

GBU

Unit:inch(mm)