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MMBFJ212 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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MMBFJ212 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 5 page  Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units ON CHARACTERISTICS SMALL SIGNAL CHARACTERISTICS IDSS Zero-Gate Voltage Drain Current* V DS = 15 V, V GS = 0 210 211 212 2.0 7.0 15 15 20 40 mA mA mA Typical Characteristics Parameter Interactions Common Drain-Source V (BR)GSS Gate-Source Breakdown Voltage IG = 1.0 µA, V DS = 0 - 25 V IGSS Gate Reverse Current V GS = 15 V, V DS = 0 - 100 pA V GS(off) Gate-Source Cutoff Voltage V DS = 15 V, I D = 1.0 nA 210 211 212 -1.0 - 2.5 - 4.0 -3.0 - 4.5 - 6.0 V V V gfs Common Source Forward Transconductance V DS = 15 V, V GS = 0, f = 1.0 kHz 210 211 212 4000 6000 7000 12,000 12,000 12,000 µmhos µmhos µmhos goss Common Source Output Conductance V DS = 15 V, V GS = 0, f = 1.0 kHz 200 µmhos *Pulse Test: Pulse Width ≤300 µS N-Channel RF Amplifier (continued) |
Similar Part No. - MMBFJ212 |
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Similar Description - MMBFJ212 |
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