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NT2H1311G0DUF Datasheet(PDF) 6 Page - NXP Semiconductors |
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NT2H1311G0DUF Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 58 page NTAG213_215_216 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet COMPANY PUBLIC Rev. 3.0 — 24 July 2013 265330 6 of 58 NXP Semiconductors NTAG213/215/216 NFC Forum T2T compliant IC with 144/504/888 bytes user memory 7. Pinning information 7.1 Pinning The pinning of the NTAG213/215/216 wafer delivery is shown in section “Bare die outline” (see Section 13.2). 8. Functional description 8.1 Block description NTAG21x ICs consist of a 180 (NTAG213), 540 bytes (NTAG215) or 924 bytes (NTAG216) EEPROM, RF interface and Digital Control Unit (DCU). Energy and data are transferred via an antenna consisting of a coil with a few turns which is directly connected to NTAG21x. No further external components are necessary. Refer to Ref. 4 for details on antenna design. • RF interface: – modulator/demodulator – rectifier – clock regenerator – Power-On Reset (POR) – voltage regulator • Anticollision: multiple cards may be selected and managed in sequence • Command interpreter: processes memory access commands supported by the NTAG21x • EEPROM interface • NTAG213 EEPROM: 180 bytes, organized in 45 pages of 4 byte per page. – 26 bytes reserved for manufacturer and configuration data – 34 bits used for the read-only locking mechanism – 4 bytes available as capability container – 144 bytes user programmable read/write memory • NTAG215 EEPROM: 540 bytes, organized in 135 pages of 4 byte per page. – 26 bytes reserved for manufacturer and configuration data – 28 bits used for the read-only locking mechanism – 4 bytes available as capability container – 504 bytes user programmable read/write memory • NTAG216 EEPROM: 924 bytes, organized in 231 pages of 4 byte per page. – 26 bytes reserved for manufacturer and configuration data Table 3. Pin allocation table Pin Symbol LA LA Antenna connection LA LB LB Antenna connection LB |
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