EMG5 datasheet(2/7 Pages) ROHM

Part #	EMG5

Description	NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

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Manufacturer	ROHM [Rohm]

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Data Sheet

EMG5 / UMG5N

lAbsolute maximum ratings

(Ta = 25°C)

Supply voltage

Input voltage

Output current

Collector current

Power dissipation

Junction temperature

Range of storage temperature

lElectrical characteristics

(Ta = 25°C)

*1 Characteristics of built-in transistor

*2 Each terminal mounted on a reference footprint

*3 120mW per element must not be exceeded.

MHz

Transition frequency

fT *1

VCE = 10V, IE = -5mA,

f = 100MHz

-

250

-

kW

Resistance ratio

R2/R1

-

3.7

4.7

5.7

-

Input resistance

R1

-

7

10

13

m

A

DC current gain

GI

VO = 5V, IO = 5mA

68

-

Output current

IO(off)

VCC = 50V, VI = 0V

-

0.5

V

Input current

II

VI = 5V

-

0.88

mA

Output voltage

VO(on)

IO / II = 5mA / 0.25mA

-

0.1

0.3

V

VI(on)

VO = 0.3V, IO = 1mA

1.4

-

0.3

Input voltage

VI(off)

VCC = 5V, IO = 100mA

-

Parameter

Symbol

Conditions

Unit

Min.

Typ.

Max.

Tj

150

°C

Tstg

-

55 to +150

°C

IC(MAX.)*1

100

mA

150 (Total)*3

mW

PD *2

VIN

-

6 to +40

V

IO

70

mA

Parameter

Symbol

Values

Unit

VCC

50

V

2/6

2012.06 - Rev.B

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