UPA2806T1L-E2-AY datasheet(1/8 Pages) RENESAS

Part #	UPA2806T1L-E2-AY

Description	MOS FIELD EFFECT TRANSISTOR

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Manufacturer	RENESAS [Renesas Technology Corp]

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R07DS0008EJ0100 Rev.1.00

Page 1 of 6

June 01, 2010

Preliminary Data Sheet

μ PA2806

MOS FIELD EFFECT TRANSISTOR

Description

The

μ PA2806 is N-channel MOSFET designed for DC/DC converter and power management applications.

Features

• Low on-state resistance

⎯ RDS(on)1 = 57 mΩ MAX. (VGS = 10 V, ID = 10 A)

⎯ RDS(on)2 = 70 mΩ MAX. (VGS = 8 V, ID = 10 A)

• Low Ciss: Ciss = 780 pF TYP. (VDS = 10 V, VGS = 0 V, f = 1 MHz)

• Built-in gate protection diode

• Thin type surface mount package with heat spreader (8-pin HVSON)

• RoHS Compliant

Ordering Information

Part No.

LEAD PLATING

PACKING

Package

μ PA2806T1L-E1-AY ∗

1

μ PA2806T1L-E2-AY ∗

1

Pure Sn (Tin)

Tape 3000 p/reel

8-pin HVSON (3333)

typ. 0.028 g

Note: ∗1. Pb-free (This product does not contain Pb in external electrode.)

Absolute Maximum Ratings (TA = 25

°C)

Item

Symbol

Ratings

Unit

Drain to Source Voltage (VGS = 0 V)

VDSS

100

V

Gate to Source Voltage (VDS = 0 V)

VGSS

±20

V

Drain Current (DC) (TC = 25

°C)

ID(DC)

±21

A

Drain Current (pulse) ∗

1

ID(pulse)

±31

A

Total Power Dissipation ∗

2

PT1

1.5

W

Total Power Dissipation (PW = 10 sec) ∗

2

PT2

3.8

W

Total Power Dissipation (TC = 25

°C) ∗

2

PT3

52

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

−55 to +150

°C

Single Avalanche Current ∗

3

IAS

14.3

A

Single Avalanche Energy ∗

3

EAS

20.4

mJ

Notes: ∗1. PW

≤ 10

μs, Duty Cycle ≤ 1%

∗2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt

∗3. Starting Tch = 25°C, VDD = 50 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH

Thermal Resistance

Channel to Ambient Thermal Resistance ∗

1

Rth(ch-A)

83.3

°C/W

Channel to Case (Drain) Thermal Resistance

Rth(ch-C)

2.4

°C/W

Note: ∗1. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt

R07DS0008EJ0100

Rev.1.00

June 01, 2010

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