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IRF9910PBF Datasheet(PDF) 1 Page - International Rectifier

Part # IRF9910PBF
Description  Dual SO-8 MOSFET for POL Low Gate Charge
Download  10 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF9910PBF Datasheet(HTML) 1 Page - International Rectifier

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www.irf.com
1
07/23/08
IRF9910PbF
HEXFET® Power MOSFET
Notes
 through … are on page 10
SO-8
Benefits
l Very Low RDS(on) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
Applications
l Dual SO-8 MOSFET for POL
converters in desktop, servers,
graphics cards, game consoles
and set-top box
l Lead-Free
VDSS
ID
20V
Q1 13.4m
:@VGS = 10V 10A
Q2 9.3m
:@VGS = 10V
12A
RDS(on) max
Absolute Maximum Ratings
Parameter
Q1 Max.
Q2 Max.
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
10
12
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
8.3
9.9
A
IDM
Pulsed Drain Current
c
83
98
PD @TA = 25°C
Power Dissipation
W
PD @TA = 70°C
Power Dissipation
Linear Derating Factor
W/°C
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJL
Junction-to-Drain Lead
–––
42
°C/W
RθJA
Junction-to-Ambient
fg
–––
62.5
± 20
20
-55 to + 150
2.0
0.016
1.3
PD - 95728A


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