RJK03E4DPA_13 datasheet(2/7 Pages) RENESAS

Part #	RJK03E4DPA

Description	Built in SBD N Channel Power MOS FET High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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RJK03E4DPA

Preliminary

R07DS0945EJ0400 Rev.4.00

Page 2 of 6

Mar 22, 2013

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

V(BR)DSS

30

—

V

ID = 10 mA, VGS = 0

Gate to source leak current

IGSS

—

±0.1

A

VGS = ±12 V, VDS = 0

Zero gate voltage drain current

IDSS

—

1

mA

VDS = 30 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

1.2

—

2.5

V

VDS = 10 V, I D = 1 mA

RDS(on)

—

2.8

3.4

m



ID = 22.5A, VGS = 8.0 V

Note4

Static drain to source on state

resistance

RDS(on)

—

3.2

4.0

m



ID = 22.5A, VGS = 4.5 V

Note4

Forward transfer admittance

|yfs|

—

115

—

S

ID = 22.5A, VDS = 5 V

Note4

Input capacitance

Ciss

—

4300

6020

pF

Output capacitance

Coss

—

500

—

pF

Reverse transfer capacitance

Crss

—

330

—

pF

VDS = 10 V

VGS = 0

f = 1 MHz

Gate Resistance

Rg

—

1.7

3.4



Total gate charge

Qg

—

33

—

nC

Gate to source charge

Qgs

—

11

—

nC

Gate to drain charge

Qgd

—

10

—

nC

VDD = 10 V

VGS = 4.5 V

ID = 45 A

Turn-on delay time

td(on)

—

18

—

ns

Rise time

tr

—

8

—

ns

Turn-off delay time

td(off)

—

66

—

ns

Fall time

tf

—

17

—

ns

VGS = 8 V, ID = 22.5 A

VDD  10 V

RL = 0.44

Rg = 4.7



Body–drain diode forward voltage

VDF

—

0.39

—

V

IF = 2 A, VGS = 0

Note4

Body–drain diode reverse recovery

time

trr

—

29

—

ns

IF =45 A, VGS = 0

diF/ dt = 100 A/ s

Notes: 4. Pulse test

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