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AUIRFS8405TRL Datasheet(PDF) 2 Page - International Rectifier |
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AUIRFS8405TRL Datasheet(HTML) 2 Page - International Rectifier |
2 / 14 page www.irf.com © 2013 International Rectifier April 30, 2013 2 AUIRFS/SL8405 Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy e EAS (tested) Single Pulse Avalanche Energy Tested Value l IAR Avalanche Current Ãd A EAR Repetitive Avalanche Energy d mJ Thermal Resistance Symbol Parameter Typ. Max. Units RθJC Junction-to-Case kl ––– 0.92 °C/W RθJA Junction-to-Ambient (PCB Mount) j ––– 40 mJ 181 See Fig. 14, 15, 24a, 24b 247 Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.026 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 1.9 2.3 VGS(th) Gate Threshold Voltage 2.2 3.0 3.9 V IDSS Drain-to-Source Leakage Current ––– ––– 1.0 ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 RG Internal Gate Resistance ––– 2.3 ––– Ω Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 100 ––– ––– S Qg Total Gate Charge ––– 107 161 Qgs Gate-to-Source Charge ––– 29 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 39 ––– Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 68 ––– td(on) Turn-On Delay Time ––– 14 ––– tr Rise Time ––– 128 ––– td(off) Turn-Off Delay Time ––– 55 ––– tf Fall Time ––– 77 ––– Ciss Input Capacitance ––– 5193 ––– Coss Output Capacitance ––– 754 ––– Crss Reverse Transfer Capacitance ––– 519 ––– Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 878 ––– Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 1225 ––– m Ω µA nA nC ns pF Conditions VDS = 10V, ID = 100A ID = 100A VGS = 20V VGS = -20V VDS = 40V, VGS = 0V, TJ = 125°C VDS =20V VGS = 10V g VGS = 0V VDS = 25V ƒ = 1.0 MHz, See Fig. 5 VGS = 0V, VDS = 0V to 32V i, See Fig. 11 ID = 100A RG = 2.7 Ω VGS = 10V g Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1.0mAd VGS = 10V, ID = 100A g VDS = VGS, ID = 100µA VDS = 40V, VGS = 0V VDD = 26V ID = 100A, VDS =0V, VGS = 10V VGS = 0V, VDS = 0V to 32V h |
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