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AUIRF7316QTR Datasheet(PDF) 2 Page - International Rectifier |
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AUIRF7316QTR Datasheet(HTML) 2 Page - International Rectifier |
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2 / 10 page  AUIRF7316Q www.irf.com 2 Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25°C, L = 35mH, RG = 25Ω, IAS = -2.8A. ISD ≤ -2.8A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 10sec. Notes: S D G Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage -30 ––– ––– V ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.022 ––– V/°C ––– 0.042 0.058 ––– 0.076 0.098 VGS(th) Gate Threshold Voltage -1.0 ––– -3.0 V gfs Forward Transconductance ––– 7.7 ––– S IDSS Drain-to-Source Leakage Current ––– ––– -1.0 ––– ––– -25 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Qg Total Gate Charge ––– 23 34 Qgs Gate-to-Source Charge ––– 3.8 5.7 Qgd Gate-to-Drain ("Miller") Charge ––– 5.9 8.9 td(on) Turn-On Delay Time ––– 13 19 tr Rise Time ––– 13 20 td(off) Turn-Off Delay Time ––– 34 51 tf Fall Time ––– 32 48 Ciss Input Capacitance ––– 710 ––– Coss Output Capacitance ––– 380 ––– Crss Reverse Transfer Capacitance ––– 180 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) à VSD Diode Forward Voltage ––– -0.78 -1.0 V trr Reverse Recovery Time ––– 44 66 ns TJ = 25°C,IF = -1.7A Qrr Reverse Recovery Charge ––– 42 63 nC di/dt = 100A/μsf VDS = VGS, ID = -250μA Conditions VDS = -15V, ID = -4.9A ID = -4.9A VGS = -20V RDS(on) Static Drain-to-Source On-Resistance Ω VGS = -4.5V, ID = -3.6Af Conditions VGS = 0V, ID = -250μA Reference to 25°C, ID = -1mA VGS = -10V, ID = -4.9A f TJ = 25°C, IS = -1.7A, VGS = 0V f integral reverse p-n junction diode. Conditions MOSFET symbol showing the A pF ns nC VDS = -25V ƒ = 1.0MHz,See Fig.5 nA μA VDS = -24V, VGS = 0V VDS = -24V, VGS = 0V, TJ = 55°C VGS = -10V, See Fig.10 fà VGS = 20V VDS = -15V VDD = -15V ID = -1.0A RG = 6.0Ω RD = 15Ω f VGS = 0V -30 ––– ––– ––– ––– -2.5 |
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