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IKP08N65H5 Datasheet(PDF) 11 Page - Infineon Technologies AG |
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IKP08N65H5 Datasheet(HTML) 11 Page - Infineon Technologies AG |
11 / 17 page 11 IKP08N65H5 Highspeedswitchingseriesfifthgeneration Rev.1.1,2012-11-09 Figure 13. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tvj=150°C,VCE=400V, VGE=15/0V,IC=4A,Dynamictestcircuitin Figure E) rG,GATERESISTOR[ Ω] 5 15 25 35 45 55 65 75 85 0.000 0.025 0.050 0.075 0.100 0.125 0.150 0.175 0.200 Eoff Eon Ets Figure 14. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=4A,rG=48 Ω,DynamictestcircuitinFigure E) Tvj,JUNCTIONTEMPERATURE[°C] 25 50 75 100 125 150 175 0.000 0.025 0.050 0.075 0.100 0.125 0.150 0.175 0.200 Eoff Eon Ets Figure 15. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=150°C,VGE=15/0V, IC=4A,rG=48 Ω,DynamictestcircuitinFigure E) VCE,COLLECTOR-EMITTERVOLTAGE[V] 200 250 300 350 400 450 500 0.000 0.025 0.050 0.075 0.100 0.125 0.150 0.175 0.200 Eoff Eon Ets Figure 16. Typicalgatecharge (IC=8A) QGE,GATECHARGE[nC] 0.0 5.0 10.0 15.0 20.0 25.0 0 2 4 6 8 10 12 14 16 130V 520V |
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