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PG-TO220-3 Datasheet(PDF) 6 Page - Infineon Technologies AG

Part # PG-TO220-3
Description  650V DuoPack IGBT and Diode High speed switching series fifth generation
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

PG-TO220-3 Datasheet(HTML) 6 Page - Infineon Technologies AG

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6
IKP08N65F5
Highspeedswitchingseriesfifthgeneration
Rev.1.1,2012-11-09
Turn-on delay time
td(on)
-
9
-
ns
Rise time
tr
-
3
-
ns
Turn-off delay time
td(off)
-
129
-
ns
Fall time
tf
-
35
-
ns
Turn-on energy
Eon
-
0.04
-
mJ
Turn-off energy
Eoff
-
0.02
-
mJ
Total switching energy
Ets
-
0.06
-
mJ
Tvj=25°C,
VCC=400V,IC=2.0A,
VGE=0.0/15.0V,
rG=48.0
Ω,Lσ=30nH,
C
σ=30pF
L
σ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time
trr
-
41
-
ns
Diode reverse recovery charge
Qrr
-
0.14
-
µC
Diode peak reverse recovery current
Irrm
-
6.6
-
A
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
-
-160
-
A/µs
Tvj=25°C,
VR=400V,
IF=4.0A,
diF/dt=800A/µs
Diode reverse recovery time
trr
-
27
-
ns
Diode reverse recovery charge
Qrr
-
0.10
-
µC
Diode peak reverse recovery current
Irrm
-
6.2
-
A
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
-
-300
-
A/µs
Tvj=25°C,
VR=400V,
IF=2.0A,
diF/dt=800A/µs
SwitchingCharacteristic,InductiveLoad
Value
min.
typ.
max.
Parameter
Symbol Conditions
Unit
IGBTCharacteristic,atTvj=150°C
Turn-on delay time
td(on)
-
9
-
ns
Rise time
tr
-
6
-
ns
Turn-off delay time
td(off)
-
145
-
ns
Fall time
tf
-
18
-
ns
Turn-on energy
Eon
-
0.10
-
mJ
Turn-off energy
Eoff
-
0.03
-
mJ
Total switching energy
Ets
-
0.13
-
mJ
Tvj=150°C,
VCC=400V,IC=4.0A,
VGE=0.0/15.0V,
rG=48.0
Ω,Lσ=30nH,
C
σ=30pF
L
σ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Turn-on delay time
td(on)
-
9
-
ns
Rise time
tr
-
4
-
ns
Turn-off delay time
td(off)
-
165
-
ns
Fall time
tf
-
25
-
ns
Turn-on energy
Eon
-
0.06
-
mJ
Turn-off energy
Eoff
-
0.02
-
mJ
Total switching energy
Ets
-
0.08
-
mJ
Tvj=150°C,
VCC=400V,IC=2.0A,
VGE=0.0/15.0V,
rG=48.0
Ω,Lσ=30nH,
C
σ=30pF
L
σ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.


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