IRFR410B datasheet(4/9 Pages) FAIRCHILD

Part #	IRFR410B

Description	500V N-Channel MOSFET

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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4 / 9 page

Rev. B1, November 2001

-100

-50

0

50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

※ Notes :

1. V

GS = 10 V

2. I

D = 0.45 A

T

J, Junction Temperature [

o

C]

-100

-50

0

50

100

150

200

0.8

0.9

1.0

1.1

1.2

※Notes:

1. V

GS = 0 V

2. I

D = 250

μ A

T

J, Junction Temperature [

o

C]

10

0

10

1

10

2

10

3

10

-2

10

-1

10

0

10

1

DC

10 ms

1 ms

100

µs

Operation in This Area

is Limited by R

DS(on)

※ Notes :

1. T

C = 25

o

C

2. T

J = 150

o

C

3. Single Pulse

V

DS, Drain-Source Voltage [V]

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

-1

10

0

10

1

※ No te s :

1 . Z

θ JC (t) = 6 . 2 5

℃ /W M a x .

2 . D u ty F a c to r, D = t

1

/t

2

3 . T

JM - T C = P DM * Z θ JC (t )

s in g le p u ls e

D= 0 .5

0. 02

0. 2

0. 05

0. 1

0. 01

t

1 , S q uar e

W a v e P u ls e D u r a tio n [s ec ]

25

50

75

100

125

150

0.0

0.2

0.4

0.6

0.8

1.0

T

C, Case Temperature [

℃]

Typical Characteristics (Continued)

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs Case Temperature

Figure 7. Breakdown Voltage Variation

vs Temperature

Figure 8. On-Resistance Variation

vs Temperature

Figure 11. Transient Thermal Response Curve

t

1

PDM

t

2

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