Electronic Components Datasheet Search |
|
BZT52C16 Datasheet(PDF) 1 Page - Vishay Siliconix |
|
BZT52C16 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 8 page BZT52-Series www.vishay.com Vishay Semiconductors Rev. 1.8, 26-Feb-13 1 Document Number: 85760 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Small Signal Zener Diodes FEATURES • Silicon planar Zener diodes • The Zener voltages are graded according to the international E24 standard • AEC-Q101 qualified • ESD capability according to AEC-Q101: Human body model > 8 kV Machine model > 800 V • Base P/N-E3 - RoHS-compliant, commercial grade • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT VZ range nom. 2.4 to 75 V Test current IZT 2.5; 5 mA VZ specification Pulse current Int. construction Single ORDERING INFORMATION DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY BZT52-series BZT52C2V4-E3-08 to BZT52C75-E3-08 3000 (8 mm tape on 7" reel) 15 000/box BZT52B2V4-E3-08 to BZT52B75-E3-08 BZT52C2V4-HE3-08 to BZT52C75-HE3-08 BZT52B2V4-HE3-08 to BZT52B75-HE3-08 BZT52C2V4-E3-18 to BZT52C75-E3-18 10 000 (8 mm tape on 13" reel) 10 000/box BZT52B2V4-E3-18 to BZT52B75-E3-18 BZT52C2V4-HE3-18 to BZT52C75-HE3-18 BZT52B2V4-HE3-18 to BZT52B75-HE3-18 PACKAGE PACKAGE NAME WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS SOD-123 10.3 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Power dissipation Diode on ceramic substrate 0.7 mm; 5 mm2 pad areas Ptot 500 mW Diode on ceramic substrate 0.7 mm; 2.5 mm2 pad areas Ptot 410 mW Zener current See table “Electrical Characteristics “ Thermal resistance junction to ambient air Valid provided that electrodes are kept at ambient temperature RthJA 300 K/W Junction temperature Tj 150 °C Storage temperature range Tstg - 65 to + 150 °C Operating temperature range Top - 55 to + 150 °C |
Similar Part No. - BZT52C16 |
|
Similar Description - BZT52C16 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |