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IRFP460C Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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IRFP460C Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page ©2002 Fairchild Semiconductor Corporation February 2002 Rev. A, February 2002 IRFP460C 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and power factor corrections. Features • 20A, 500V, RDS(on) = 0.24Ω @VGS = 10 V • Low gate charge ( typical 130nC) • Low Crss ( typical 60 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter IRFP460C Units VDSS Drain-Source Voltage 500 V ID Drain Current - Continuous (TC = 25°C) 20 A - Continuous (TC = 100°C) 12.5 A IDM Drain Current - Pulsed (Note 1) 80 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 1050 mJ IAR Avalanche Current (Note 1) 20 A EAR Repetitive Avalanche Energy (Note 1) 23.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) 235 W - Derate above 25°C 1.88 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 0.53 °C/W RθCS Thermal Resistance, Case-to-Sink 0.24 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W TO-3P IRFP Series GS D ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ! ! ! ! ! ! ! ! ! ! ! ! ◀ ◀ ◀ ◀ ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ! ! ! ! ! ! ! ! ! ! ! ! ◀ ◀ ◀ ◀ D G S |
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