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IR1166STRPBF Datasheet(PDF) 7 Page - International Rectifier |
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IR1166STRPBF Datasheet(HTML) 7 Page - International Rectifier |
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7 / 16 page  www.irf.com 7 IR1166S GENERAL DESCRIPTION The IR1166 Smart Rectifier IC can emulate the operation of diode rectifier by properly driving a Synchronous Rectifier (SR) MOSFET. The direction of the rectified current is sensed by the input comparator using the power MOSFET RDSon as a shunt resistance and the GATE pin of the MOSFET is driven accordingly. Internal blanking logic is used to prevent spurious transitions and guarantee operation in continuous (CCM), discountinuous (DCM) and critical (CrCM) conduction mode. STATES OF OPERATION UVLO/Sleep Mode The IC remains in the UVLO condition until the voltage on the VCC pin exceeds the VCC turn on threshold voltage, V CC ON. During the time the IC remains in the UVLO state, the gate drive circuit is inactive an d the IC draws a quiescent current of I CC START. The UVLO mode is accessible from any other state of operation whenever the IC supply voltage condition of VCC < V CC UVLO occurs. The sleep mode is initiated by pulling the EN pin below 2.5V (typ). In this mode the IC is essentially shut down and draws a very low quiescent supply current. Normal Mode The IC enters in normal operating mode once the UVLO voltage has been exceeded. At this point the gate driver is operating and the IC will draw a maximum of ICC from the supply voltage source. The modes of operation for a Flyback circuit differ mainly for the turn-off phase of the SR switch, while the turn-on phase of the secondary switch (which correspond to the turn off of the primary side switch) is identical. Turn-on phase When the conduction phase of the SR FET is initiated, current will start flowing through its body diode, generating a negative VDS voltage across it. The body diode has generally a much higher voltage drop than the one caused by the MOSFET on resistance and therefore will trigger the turn-on threshold VTH2. At that point the IR1166 will drive the gate of MOSFET on which will in turn cause the conduction voltage VDS to drop down. This drop is usually accompained by some amount of ringing, that can trigger the input comparator to turn off; hence, a Minimum On Time (MOT) blanking period is used that will maintain the power MOSFET on for a minimum amount of time. The programmed MOT will limit also the minimum duty VGate VTH1 VTH2 VTH3 VDS Input comparator thresholds PDF created with pdfFactory trial version www.pdffactory.com |
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