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AUIRF7341QTR Datasheet(PDF) 2 Page - International Rectifier |
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AUIRF7341QTR Datasheet(HTML) 2 Page - International Rectifier |
2 / 12 page AUIRF7341Q 2 www.irf.com Notes: Repetitive rating; pulse width limited by max. junction temperature. VDD = 25V, starting TJ = 25°C, L = 10.7mH, RG = 25Ω, IAS = 5.2A. Pulse width ≤ 300μs; duty cycle ≤ 2%. Surface mounted on FR-4 board, t ≤ 10sec. S D G Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C ––– 0.043 0.050 ––– 0.056 0.065 VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V gfs Forward Transconductance 10.4 ––– ––– S IDSS Drain-to-Source Leakage Current ––– ––– 2.0 ––– ––– 25 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Qg Total Gate Charge ––– 29 44 Qgs Gate-to-Source Charge ––– 2.9 4.4 Qgd Gate-to-Drain ("Miller") Charge ––– 7.3 11 td(on) Turn-On Delay Time ––– 9.2 ––– tr Rise Time ––– 7.7 ––– td(off) Turn-Off Delay Time ––– 31 ––– tf Fall Time ––– 12.5 ––– Ciss Input Capacitance ––– 780 ––– Coss Output Capacitance ––– 190 ––– Crss Reverse Transfer Capacitance ––– 66 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.2 V trr Reverse Recovery Time ––– 51 77 ns TJ = 25°C,IF = 2.6A Qrr Reverse Recovery Charge ––– 76 114 nC di/dt = 100A/μs e VDS = VGS, ID = 250μA Conditions VDS = 10V, ID = 5.2A ID = 5.2A VGS = 20V RDS(on) Static Drain-to-Source On-Resistance Ω VGS = 4.5V, ID = 4.42Ae Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 10V, ID = 5.1A e TJ = 25°C, IS = 2.6A, VGS = 0V e integral reverse p-n junction diode. Conditions MOSFET symbol showing the A pF ns nC VDS = 25V ƒ = 1.0MHz nA μA VDS = 44V, VGS = 0V VDS = 44V, VGS = 0V, TJ = 150°C VGS = 10V VGS = -20V VDS = 44V VDD = 28V ID = 1.0A RG = 6.0Ω VGS = 10V e VGS = 0V 42 ––– ––– ––– ––– 2.4 |
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