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RJK0366DPA-02 Datasheet(PDF) 1 Page - Renesas Technology Corp

Part # RJK0366DPA-02
Description  N Channel Power MOS FET High Speed Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK0366DPA-02 Datasheet(HTML) 1 Page - Renesas Technology Corp

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R07DS0920EJ0300 Rev.3.00
Page 1 of 6
Mar 21, 2013
Preliminary Datasheet
RJK0366DPA-02
30V, 25A, 10.0m
 max.
N Channel Power MOS FET
High Speed Power Switching
Features
 High speed switching
 Capable of 4.5 V gate drive
 Low drive current
 High density mounting
 Low on-resistance
 Pb-free
 Halogen-free
Outline
RENESAS Package code: PWSN0008DE-A
(Package name: WPAK(3F))
G
D
SS S
DD D
4
12 3
56 7 8
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
8
7
6
5
2 1
3
4
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
25
A
Drain peak current
ID(pulse)
Note1
100
A
Body-drain diode reverse drain current
IDR
25
A
Avalanche current
IAP
Note 2
11
A
Avalanche energy
EAR
Note 2
12.1
mJ
Channel dissipation
Pch
Note3
30
W
Channel to case thermal resistance
ch-c Note3
4.17
C/W
Channel temperature
Tch
150
C
Storage temperature
Tstg
–55 to +150
C
Notes: 1. PW
 10 s, duty cycle  1%
2. Value at Tch = 25
C, Rg  50 
3. Tc = 25
C
R07DS0920EJ0300
Rev.3.00
Mar 21, 2013


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