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NZH11C Datasheet(PDF) 3 Page - NXP Semiconductors |
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NZH11C Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 9 page NZH_SER_1 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 27 January 2010 3 of 9 NXP Semiconductors NZH series Single Zener diodes 5. Limiting values [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [2] Device mounted on a ceramic PCB, Al2O3, standard footprint. 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [2] Device mounted on a ceramic PCB, Al2O3, standard footprint. [3] Soldering point of cathode tab. 7. Characteristics [1] Pulse test: tp ≤ 300 μs; δ≤ 0.02. Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit IF forward current - 250 mA Ptot total power dissipation Tamb ≤ 25 °C [1] -500 mW [2] -1 W Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air [1] - - 250 K/W [2] - - 125 K/W Rth(j-sp) thermal resistance from junction to solder point [3] --70 K/W Table 7. Characteristics Tj =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF =10mA [1] --0.9 V Table 8. Characteristics per type; NZH3V0B to NZH10C Tj =25 °C unless otherwise specified. NZHxxx Working voltage VZ (V); IZ =20mA Maximum differential resistance rdif (Ω) Reverse current IR (μA) Diode capacitance Cd (pF)[1] Min Max IZ =1mA IZ =20mA Max VR (V) Max 3V0B 2.85 3.15 1000 80 50 1 450 3V3A 3.16 3.38 1000 70 20 1 450 3V6B 3.42 3.78 1000 60 5 1 450 3V9B 3.71 4.10 1000 50 5 1 450 |
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