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PBSS4021SPN Datasheet(PDF) 3 Page - NXP Semiconductors

Part # PBSS4021SPN
Description  20 V NPN/PNP low VCEsat (BISS) transistor
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBSS4021SPN Datasheet(HTML) 3 Page - NXP Semiconductors

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PBSS4021SPN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 13 October 2010
3 of 20
NXP Semiconductors
PBSS4021SPN
20 V NPN/PNP low VCEsat (BISS) transistor
5.
Limiting values
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3]
Device mounted on a ceramic PCB, Al2O3, standard footprint.
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
TR1 (NPN)
IC
collector current
-
7.5
A
TR2 (PNP)
IC
collector current
-
−6.3
A
Per transistor; for the PNP transistor with negative polarity
VCBO
collector-base voltage
open emitter
-
20
V
VCEO
collector-emitter voltage
open base
-
20
V
VEBO
emitter-base voltage
open collector
-
5
V
ICM
peak collector current
single pulse; tp ≤ 1ms
-
15
A
IB
base current
-
1
A
Ptot
total power dissipation
Tamb ≤ 25 °C
[1] -0.73
W
[2] -1
W
[3] -1.7
W
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
[1] -0.86
W
[2] -1.4
W
[3] -2.3
W
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−55
+150
°C
Tstg
storage temperature
−65
+150
°C


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