BSS84AKT datasheet(6/16 Pages) PHILIPS

Part #	BSS84AKT

Description	50 V, 150 mA P-channel Trench MOSFET

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BSS84AKT

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Product data sheet

Rev. 1 — 23 May 2011

6 of 16

NXP Semiconductors

BSS84AKT

50 V, 150 mA P-channel Trench MOSFET

7.

Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source breakdown

voltage

ID = -10 µA; VGS =0V; Tj = 25 °C

-50

--V

VGSth

gate-source threshold

voltage

ID =-250 µA; VDS =VGS; Tj = 25 °C

-1.1

-1.6

-2.1

V

IDSS

drain leakage current

VDS =-50 V; VGS =0V; Tj = 25 °C

---1

µA

VDS =-50 V; VGS =0V; Tj = 150 °C

---2

µA

IGSS

gate leakage current

VGS =-20 V; VDS =0V; Tj = 25 °C

-

-10

µA

VGS =20 V; VDS =0V; Tj = 25 °C

-

-10

µA

RDSon

drain-source on-state

resistance

VGS =-10 V; ID = -100 mA; Tj =25 °C

-

4.5

7.5

Ω

VGS =-10 V; ID = -100 mA; Tj = 150 °C

-

8

13.5

Ω

VGS =-5 V; ID = -100 mA; Tj =25 °C

-

5.7

8.5

Ω

gfs

forward transconductance VDS =-10 V; ID = -100 mA; Tj = 25 °C

-

150

-

mS

Dynamic characteristics

QG(tot)

total gate charge

VDS =-25 V; ID = -200 mA; VGS =-5V;

Tj =25°C

-

0.26

0.35

nC

QGS

gate-source charge

-

0.12

-

nC

QGD

gate-drain charge

-

0.09

-

nC

Ciss

input capacitance

VDS = -25 V; f = 1 MHz; VGS =0V;

Tj =25°C

-

2436pF

Coss

output capacitance

-

4.5

-

pF

Crss

reverse transfer

capacitance

-1.3

-pF

td(on)

turn-on delay time

VDS =-30 V; RL =250 Ω; VGS =-10 V;

RG(ext) =6 Ω; Tj =25°C

-

1326ns

tr

rise time

-

11

-

ns

td(off)

turn-off delay time

-

48

96

ns

tf

fall time

-

25

-

ns

Source-drain diode

VSD

source-drain voltage

IS =-115mA; VGS =0V; Tj = 25 °C

-0.48

-0.85

-1.2

V

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